Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels to approximately
50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide acceptance throughout
the industry.
FEATURES :
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
For further information please view it online: IRF9540N
(pdf | 9 pages)
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