2SB921: PNP Epitaxial Planar Silicon Transistor

Application : 
Large current switching of relay drivers, high-speed inverters, converters.

For further information please view it online: 2SB921 (pdf | 4 pages)

6N139: Low Input Current, High Gain Optocoupler

FEATURES :
High Current Transfer Ratio – 2000% Typical (4500% Typical for HCNW139/138)

• Low Input Current Requirements – 0.5 mA

• TTL Compatible Output – 0.1 V VOL Typical

• Performance Guaranteed over Temperature 0°C to 70°C

• Base Access Allows Gain Bandwidth Adjustment

• High Output Current  – 60 mA

• Safety Approval

UL Recognized – 2500 V rms

for 1 Minute and 5000 V rms*

for 1 Minute per UL 1577

CSA Approved

VDE 0884 Approved with

VIORM = 1414 V peak for HCNW139 and HCNW138 BSI Certified (HCNW139 and HCNW138)

• Available in 8-Pin DIP or SOIC-8 Footprint or Widebody Package

•MIL-STD-1772 Version Available (HCPL-5700/1)

APPLICATION :

•  Ground Isolate Most Logic Families – TTL/TTL, CMOS/TTL, CMOS/CMOS, LSTTL/TTL, CMOS/LSTTL
•  Low Input Current Line Receiver
•  High Voltage Insulation (HCNW139/138)
•  EIA RS-232C Line Receiver
•  Telephone Ring Detector
•  117 V ac Line Voltage Status Indicator – Low Input Power Dissipation
•  Low Power Systems – Ground Isolation

DESCRIPTION :
        These high gain series couplers use a Light Emitting Diode and an integrated high gain photodetector to provide extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage result in TTL compatible saturation voltages and high speed operation. Where desired the VCC and VO terminals may be tied together to achieve conventional photodarlington operation. A base access terminal allows a gain bandwidth adjustment to be made.
For further information please view it online: 6N139 (pdf | 15 pages)

2N7000: N-Channel Enhancement Mode Field Effect Transistor

FEATURES :

• Efficient high density cell design approaching (3 million/in2)
• Voltage  controlled small  signal  switch 
• Rugged
• High saturation current
• Low RDS  (ON)

For further information please view it online: 2N7000 (pdf | 10 pages)

2N2222: NPN Switching Transistor

FEATURES :

• High current (max.800mA)
• Low voltage (max. 40V)

APPLICATION :

• Linear amplification and switching.

DESCRIPTION :

• NPN switching transistor in a TO-18 metal package.
• PNP complement : 2N2907A.

For further information, view it online: 2N2222 (pdf | 8 pages)

1N5333B through 1N5388B: 5 Watt Zener Regulator Diodes

5 WATT SURMETIC 40 SILICON ZENER DIODES : This is a complete series of 5 watt zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this is in axial-lead, transfer-molded plastic package that offers protection in all common environmental conditions.

Specification Features :

• Up to 180 Watt Surge Rating @ 8.3 ms
• Maximum Limits Quaranteed on Seven Electrical Parameters

For further information, view it online: 1N5333B through 1N5388B (pdf | 6 pages)

1N4148, 1N4150, 1N4448: Switching Diode

• Application : High-speed switching.
• Features : Glass sealed envelope, high speed, high reliability.
• Construction : Silicon epitaxial planar.

      For further information, view it online: 1N4148 (pdf | 3 pages)